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                                      Silicon Electro-Optical Modulators for Optical Interconnect and Analog Applications

                                      Post Time:2013-06-28 11:00  Click Times:22407

                                       

                                       

                                      Title:Silicon Electro-Optical Modulators for Optical Interconnect and Analog Applications

                                      Reporter:Rena Z.R. Huang

                                      Host:Prof. Zhang xiaoguang

                                      Time:July 1, 2013(Monday)14:30PM-16:00PM

                                      Place:The New Research Building Meeting Room 314

                                       

                                      Si photonics has emerged as a new platform to integrate photonic elements in close proximity with Si CMOS electronics. A Si CMOS compatible electro-optic modulator is a crucial photonic device for the realization of the vision of Si photonics for various applications, such as on-chip and off-chip optical interconnects and RF analog optical links. At Dr. Huang’s group, a SiGe heterojunction bipolar transistor is utilized to create a high-speed electro-optic modulator used in optical interconnects for data center applications. Commercial IBM SiGe 8HP production line was used to produce the HBT for the use as an optical modulator. Epitaxial growth of Si on SOI substrate was also considered for fabrication of HBT EO modulators.

                                       

                                      Si linear EO modulator for analog applications has exhibited great potential. The spur free dynamic range of the SiGe HBT EO modulator and some other Si devices have studied and will be presented in this talk.

                                       

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